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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1431 DESCRIPTION *With TO-66 package *Excellent safe operating area APPLICATIONS *For use in high frequency power amplifier applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 110 110 5 2 23 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE sat ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=1A; IB=0.1A IC=1A; IB=0.1A VCB=110V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=2V IC=0.4A ; VCE=10V 50 30 MIN 110 5 2SC1431 TYP. MAX UNIT V V 1.0 1.2 10 10 240 V V A A MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1431 Fig.2 outline dimensions 3 |
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